A Product Line of
Diodes Incorporated
DMP21D0UT
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
-
-
-
-
-
-
-1
±10
V
μ A
μ A
V GS = 0V, I D = -250 μ A
V DS = -20V, V GS = 0V
V GS = ±8V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
-
-0.7
-
V
V DS = V GS , I D = -250 μ A
495
V GS = -4.5V, I D = -400mA
Static Drain-Source On-Resistance
R DS (ON)
-
-
690
m Ω
V GS = -2.5V, I D = -300mA
960
V GS = -1.8V, I D = -100mA
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
50
-
-
-
-
-1.2
mS
V
V DS = -3V, I D = -300mA
V GS = 0V, I S = -300mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
76.5
13.7
10.7
195
1.5
1.0
0.2
0.3
7.1
8.0
31.7
18.5
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
?
nC
nC
nC
nC
ns
ns
ns
ns
V DS = -10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = -8V,V DS = -15V,I D = -1A
V GS = -4.5V, V DS = -15V,
I D = -1A
V DS = -10V, -I D = 1A
V GS = -4.5V, R G = 6 ?
Notes:
7. Short duration pulse test used to minimize self-heating effect.
2.0
V GS = -4.5V
V GS = -4.0V
V GS = -3.0V
2.0
1.5
1.0
0.5
V GS = -2.5V
V GS = -2.0V
V GS = -1.8V
V GS = -1.5V
1.5
1.0
0.5
V DS = -5V
T A = 150°C
T A = 85°C
0
0
V GS = -1.2V
1 2 3 4
5
0
0
T A = 125°C
T A = 25°C
T A = -55°C
0.5 1.0 1.5 2.0 2.5
3.0
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 3 Typical Output Characteristic
-V GS , GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Transfer Characteristic
DMP21D0UT
D atasheet Number: DS35297 Rev. 2 - 2
3 of 7
www.diodes.com
March 2012
? Diodes Incorporated
相关PDF资料
DMP21D5UFB4-7B MOSF P CH 20V 700MA X2-DFN1006-3
DMP2215L-7 MOSFET P-CH 20V 2.7A SOT23-3
DMP2225L-7 MOSFET P-CH 20V 2.6A SOT23-3
DMP2240UDM-7 MOSFET P-CH DUAL 20V 2A SOT-26
DMP2240UW-7 MOSFET P-CH 20V 1.5A SC70-3
DMP22D4UFA-7B MOSFET P CH 20V 330MA
DMP22D6UT-7 MOSFET P-CH 20V 430MA SOT-523
DMP2305U-7 MOSFET P-CH 20V 4.2A SOT-23
相关代理商/技术参数
DMP21D2UFA-7B 功能描述:MOSFET P-CH 20V 0.33A X2DFN-3 制造商:diodes incorporated 系列:- 包装:剪切带(CT) 零件状态:在售 FET 类型:P 沟道 技术:MOSFET(金属氧化物) 漏源电压(Vdss):20V 电流 - 连续漏极(Id)(25°C 时):330mA(Ta) 驱动电压(最大 Rds On,最小 Rds On):1.5V,4.5V 不同 Id 时的 Vgs(th)(最大值):1V @ 250μA 不同 Vgs 时的栅极电荷?(Qg)(最大值):0.8nC @ 4.5V Vgs(最大值):±8V 不同 Vds 时的输入电容(Ciss)(最大值):49pF @ 15V FET 功能:- 功率耗散(最大值):360mW(Ta) 不同?Id,Vgs 时的?Rds On(最大值):1 欧姆 @ 200mA,4.5V 工作温度:-55°C ~ 150°C(TJ) 安装类型:表面贴装 供应商器件封装:X2-DFN0806-3 封装/外壳:3-XFDFN 标准包装:1
DMP21D5UFB4-7B 功能描述:MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP21D5UFD-7 功能描述:MOSFET P-Ch Enh Mode FET 1.0Ohm -20V -600mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2215L 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP2215L-7 功能描述:MOSFET P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2225L 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP2225L-7 功能描述:MOSFET P-Channel 1.08W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2225LQ-7 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET Low Input/Output Leakage